III-V group nitride system semiconductor self-standing...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S190000, C257S189000, C257S200000, C257S201000, C257S614000

Reexamination Certificate

active

11052764

ABSTRACT:
A III–V group nitride system semiconductor self-standing substrate has: a first III–V group nitride system semiconductor crystal layer that has a region with dislocation lines gathered densely, the dislocation lines being gathered substantially perpendicular to a surface of the substrate, and a region with dislocation lines gathered thinly; and a second III–V group nitride system semiconductor crystal layer that is formed up to 10 μm from the surface of the substrate on the first III–V group nitride system semiconductor crystal layer and that has a dislocation density distribution that is substantially uniform.

REFERENCES:
patent: 6667184 (2003-12-01), Motoki et al.
patent: 2002/0048964 (2002-04-01), Yuasa et al.
patent: 2002/0197825 (2002-12-01), Usui et al.
patent: 2003/0045017 (2003-03-01), Hiramatsu et al.
patent: 2003/0197166 (2003-10-01), Ishida et al.
patent: 2004/0206967 (2004-10-01), Oshima et al.
patent: 2004/0245535 (2004-12-01), D'Evelyn et al.
patent: 11-251253 (1999-09-01), None
patent: 2003-165799 (2003-06-01), None
patent: 2003-178984 (2003-06-01), None
Ok-Hyun Nam, et al., “Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy”, Appl. Phys. Lett. 71, vol. 18, Nov. 3, 1997, pp. 2638-2640.
Akira Usui, et al., “Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy”, Japan Journal Appl. Phys. vol. 36, Part 2, No. 7B, Jul. 15, 1997, pp. L899-L902.
Kensaku Motoki, et al, “Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate”, Japan Journal Appl. Phys. vol. 40, Part 2, No. 2B, Feb. 15, 2001, pp. L140-L143.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

III-V group nitride system semiconductor self-standing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with III-V group nitride system semiconductor self-standing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III-V group nitride system semiconductor self-standing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3824896

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.