Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2007-06-12
2007-06-12
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S190000, C257S189000, C257S200000, C257S201000, C257S614000
Reexamination Certificate
active
11052764
ABSTRACT:
A III–V group nitride system semiconductor self-standing substrate has: a first III–V group nitride system semiconductor crystal layer that has a region with dislocation lines gathered densely, the dislocation lines being gathered substantially perpendicular to a surface of the substrate, and a region with dislocation lines gathered thinly; and a second III–V group nitride system semiconductor crystal layer that is formed up to 10 μm from the surface of the substrate on the first III–V group nitride system semiconductor crystal layer and that has a dislocation density distribution that is substantially uniform.
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Hitachi Cable Ltd.
McGinn IP Law Group PLLC
Pert Evan
Tran Tan
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