III-V group GaN-based compound semiconductor device

Details III-V group GaN-based compound semiconductor device III-V group GaN-based compound semiconductor device

2006-06-02

2010-11-02

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S043010

Reexamination Certificate

active

07826505

ABSTRACT:
A III-V Group GaN-based compound semiconductor device with an improved structure having low current comsumption, high optical output, and a long lifetime is provided. The III-V Group GaN-based compound semiconductor device includes an active layer and a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating AlxGa(1-x)N layers (0<x<1) and GaN layers, and the composition ratio of aluminum of the AlxGa(1-x)N layers decreases at a predetermined rate away from the active layer.

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patent: 5670798 (1997-09-01), Schetzina
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 7015515 (2006-03-01), Taki et al.

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