Alloys or metallic compositions – Aluminum base – Copper containing
Patent
1981-02-02
1984-05-08
James, Andrew J.
Alloys or metallic compositions
Aluminum base
Copper containing
357 17, 357 65, 357 67, 357 72, 420427, H01L 2348, H01L 2328, H01L 2946, H01L 2962
Patent
active
044478259
ABSTRACT:
Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition.
REFERENCES:
patent: 896705 (1906-08-01), Von Bolton
patent: 1023315 (1912-04-01), Hunter
patent: 3379520 (1968-04-01), Chang et al.
patent: 3675090 (1972-07-01), Neale
patent: 3701931 (1972-10-01), Revitz et al.
Electrochem. Soc., vol. 122, No. 8, pp. 1152-1154, "Modified Contact Metallizations for GaP to Provide Barrier Action Against Gallium Migration", by W. A. Brantley et al.; 1975.
Oana Yasuhisa
Ozawa Norio
Yamashita Masato
Yasuda Nobuaki
James Andrew J.
Nehrbass Seth M.
Tokyo Shibaura Denki Kabushiki Kaisha
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