Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-07-19
2011-07-19
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S079000, C257S103000, C257S627000, C257SE33003, C257SE33032
Reexamination Certificate
active
07982205
ABSTRACT:
A III-V group compound semiconductor light-emitting diode, containing a substrate1having plural crystal planes, and a grown layer formed on the substrate by epitaxial growth, the grown layer at least including a barrier layer2and3and an active layer8, wherein at least the active layer of the grown layer has plural crystal planes each having a different bandgap energy in the in-plane direction, and an Ohmic electrode4for current injection is formed on a crystal plane (3) having a higher bandgap energy among the plural crystal planes.
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Birch & Stewart Kolasch & Birch, LLP
National Institute of Advanced Industrial Science and Technology
Sefer A.
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