III-V compound semiconductor with high crystal quality and lumin

Details III-V compound semiconductor with high crystal quality and lumin III-V compound semiconductor with high crystal quality and lumin

1994-09-01

1997-02-25

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

257 94, 257 96, 257103, 257190, 257201, 257615, H01L 2715, H01L 3112, H01L 3300

Patent

active

056061803

ABSTRACT:
The invention includes a Group III-V compound semiconductor that comprises (1) a thin crystal film of A.sub.1.sup.III As.sub.w P.sub.1-w, wherein A.sub.1.sup.III represents a Group III element with Al composition of less than 0.3, 0.5<w.ltoreq.1, formed on a semiconductor crystal substrate or on an epitaxial film grown on the substrate, a thin crystal film of B.sup.III As, wherein B.sup.III represents a Group III element with Al composition of not less than 0.45, formed on the A.sub.1.sup.III As.sub.w P.sub.1-w film, and a thin film of C.sub.1.sup.III As.sub.x P.sub.1-x, wherein C.sub.1.sup.III represents a Group III element with Al composition of less than 0.3, 0.ltoreq.x 0.5, formed on the B.sup.III As film; or (2) a thin film of A.sub.2.sup.III As.sub.u P.sub.1-u, wherein A.sub.2.sup.III represents a Group III element with In composition of not less than 0.3, 0.ltoreq.u.ltoreq.1, formed on a semiconductor crystal substrate or on an epitaxial film grown on the substrate, a thin crystal film of B.sup.III As, wherein B.sup.III represents a Group III element with Al composition of not less than 0.45, formed on the A.sub.2.sup.III As.sub.u P.sub.1-u film, and a thin film of C.sub.2.sup.III As.sub.z P.sub.1-z, wherein C.sub.2.sup.III represents a Group III element, 0.ltoreq.z.ltoreq.1, formed on the B.sup.III As film.

REFERENCES:
patent: 5016252 (1991-05-01), Hamada et al.
patent: 5103270 (1992-04-01), Sato et al.
patent: 5121183 (1992-06-01), Ogasawara et al.
patent: 5235194 (1993-08-01), Izumiya et al.
patent: 5287377 (1994-02-01), Fukuzawa et al.
patent: 5352909 (1994-10-01), Hori

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