III-V compound semiconductor device with Schottky electrode of i

Details III-V compound semiconductor device with Schottky electrode of i III-V compound semiconductor device with Schottky electrode of i

1995-03-03

1997-03-11

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257192, 257194, 257280, 257472, 257615, H01L 310256

Patent

active

056104103

ABSTRACT:
A field effect group III-V compound semiconductor device having a Schottky gate electrode includes: a semiconductor substrate; a plurality of group III-V compound semiconductor crystal layers including an active layer for transferring carriers and formed on the semiconductor substrate; an InAlP layer formed at least a partial surface of the group III-V compound semiconductor crystal layers; a gate electrode formed on the InAlP layer and forming Schottky contact therewith; and a pair of source/drain electrodes disposed to interpose therebetween the gate electrode, and forming ohmic contact with the active layer. A group III-V compound semiconductor device is provided with a Schottky electrode highly resistant to a current flow.

REFERENCES:
patent: 4814838 (1989-03-01), Kuroda et al.

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