III-V compound semiconductor device with a polycrystalline struc

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices

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257 99, 257103, 257 79, H01L 3300

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active

056591845

ABSTRACT:
A III-V compound semiconductor device comprises the use of a compound semiconductor of groups III-V of the periodic table with a polycrystalline structure of an average grain size of 0.6 .mu.m or larger.

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B.K. Bischoff et al., "Selective Groth of GaAs"--IBM Technical Disclosure Bulletin, vol. 16, No. 9, Feb. 1974, New York US, p. 3077.
M. Yamagachi et al., "Efficiency Consideration for Polycrystalline GaAs Thin-Film Solar Cells"; J. of App. Physics, vol. 60, No., 1 Jul. 1, 1986 (NY US pp. 413-417).
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O. Paz et al, "Collection of electron-beam generated carriers with presence of a grain boundary or an epitaxial interface", J. Appl. Phys., vol. 61, No. Feb. 15, 1987.

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