III-V Compound semiconductor device

Details III-V Compound semiconductor device III-V Compound semiconductor device

1983-12-23

1986-03-04

Edlow, Martin H.

357 15, 357 22, H01L 2946, H01L 2964

Patent

active

045742987

ABSTRACT:
A semiconductor device with one or two conductive layers comprising a nitride of a high-melting transition metal of one of Groups IV, V and VI of the Periodic Table deposited between a III-V compound, such as GaAs, semiconductor substrate and an electrode metal layer.

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