III-V Compound heteroepitaxial 3-D semiconductor structures util

Details III-V Compound heteroepitaxial 3-D semiconductor structures util III-V Compound heteroepitaxial 3-D semiconductor structures util

1987-03-04

1988-12-27

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

With contiguous layers of different semiconductive material

148 336, 148DIG65, 148DIG72, 148DIG97, 148DIG110, 148DIG160, 148DIG164, 156610, 156613, 357 16, 437 51, 437110, 437133, 437915, 437976, H01L 2714, H01L 29161

Patent

active

047938722

ABSTRACT:
A component of semiconductor material deposited by epitaxial growth on a substrate having a predetermined and different lattice parameter consists of an alternate succession of layers of a first type and layers of a second type deposited on the substrate. The lattice parameter of the first type of layers is substantially matched with the lattice parameter of the substrate. In the case of the second type of layers, the lattice parameter is matched and even equal to that of the first type of layers. A component having a lattice parameter equal to that of the second type of layers is formed on the last layer of the second type. Moreover, the energy gaps of the two types of layers are different.

REFERENCES:
patent: 4103312 (1978-07-01), Chang et al.
patent: 4136350 (1979-01-01), Tien
patent: 4392115 (1983-07-01), Volluet et al.
patent: 4404265 (1983-09-01), Manasevit
patent: 4517047 (1985-05-01), Chang et al.
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
patent: 4592791 (1986-06-01), Nakajima et al.
patent: 4609407 (1986-09-01), Masao et al.
patent: 4677633 (1987-06-01), Yamamato et al.
patent: 4679061 (1987-07-01), Capasso et al.
patent: 4688068 (1987-08-01), Chaffin et al.
patent: 4689650 (1987-08-01), Dinan
2300 Journal of Crystal Growth, vol. 70, (1984), Dec. No. 1/2, Amsterdam, NL.
320 Applied Physics Letters, 46, (1985), Jan., No. 1, Woodbury, N.J., U.S.A.

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