Fishing – trapping – and vermin destroying
Patent
1992-05-15
1995-05-02
Fourson, George
Fishing, trapping, and vermin destroying
437 5, 437912, 437 40, H01L 21203
Patent
active
054119146
ABSTRACT:
A new III-V buffer or passivation material is described which is produced by low temperature growth (LTG) of III-V compounds. The material has unique and desirable properties, particularly for closely spaced, submicron gate length active III-V semiconductor FET devices, such as HEMT's, MESFET's and MISFET's. The LTG material is grown under ambient conditions which incorporate an excess of the more volatile of the III-V species into the grown material. The new material is crystalline, highly resistive, relatively insensitive to light, and can be overgrown with high quality III-V active layers or used as a passivation material to insulate and protect active device structures.
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Calawa Arthur R.
Chen Chang-Lee
Mahoney Leonard J.
Manfra Michael J.
Smith Frank W.
Booth Richard A.
Fourson George
Massachusetts Institute of Technology
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