III-V arsenide-nitride semiconductor

Details III-V arsenide-nitride semiconductor III-V arsenide-nitride semiconductor

1997-08-07

2000-08-08

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 94, 257 97, 257190, 372 45, H01L 3300, H01L 310304

Patent

active

061005460

ABSTRACT:
III-V arsenide-nitride semiconductor are disclosed. Group III elements are combined with group V elements, including at least nitrogen and arsenic, in concentrations chosen to lattice match commercially available crystalline substrates. Epitaxial growth of these III-V crystals results in direct bandgap materials, which can be used in applications such as light emitting diodes and lasers. Varying the concentrations of the elements in the III-V materials varies the bandgaps, such that materials emitting light spanning the visible spectra, as well as mid-IR and near-UV emitters, can be created. Conversely, such material can be used to create devices that acquire light and convert the light to electricity, for applications such as full color photodetectors and solar energy collectors. The growth of the III-V material can be accomplished by growing thin layers of elements or compounds in sequences that result in the overall lattice match and bandgap desired.

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