III-Phosphide and III-Arsenide flip chip light-emitting devices

Details III-Phosphide and III-Arsenide flip chip light-emitting devices III-Phosphide and III-Arsenide flip chip light-emitting devices

2005-09-20

2005-09-20

Tran, Minh-Loan (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C438S027000, C438S029000, C438S046000

Reexamination Certificate

active

06946309

ABSTRACT:
A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.

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