III-nitride superlattice structures

Details III-nitride superlattice structures III-nitride superlattice structures

1997-03-19

1998-11-03

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 17, 257 18, 257 22, 257 96, 257103, H01L 2906

Patent

active

058312773

ABSTRACT:
The subject invention involves the p-type doping of Al.sub.x Ga.sub.1-x N thin films with a III-nitride composition and specifically a {Al.sub.x Ga.sub.1-x N/GaN} short-period superlattice structure of less than 5000 .ANG. thickness in total in which both the barriers and the wells are p-type doped with Mg.

REFERENCES:
patent: 5670798 (1997-09-01), Schetzina

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