III-nitride semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Reexamination Certificate

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Details

C257S077000, C257SE33025, C257SE33028, C257SE33030, C257SE33033

Reexamination Certificate

active

07432534

ABSTRACT:
The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, a SiaCbNc(a≧0,b>0,c≧0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNclayer having an n-type conductivity and a thickness of 5 Å to 500 Å for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNclayer. According to the present invention, a SiaCbNc(a≧0,b>0,c>0) layer which can be doped with a high concentration is intervened between a p-type nitride semiconductor layer and a p-side electrode. Therefore, the present invention can solve the conventional problem.

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