Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-03-04
2008-10-07
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S077000, C257SE33025, C257SE33028, C257SE33030, C257SE33033
Reexamination Certificate
active
07432534
ABSTRACT:
The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, a SiaCbNc(a≧0,b>0,c≧0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNclayer having an n-type conductivity and a thickness of 5 Å to 500 Å for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNclayer. According to the present invention, a SiaCbNc(a≧0,b>0,c>0) layer which can be doped with a high concentration is intervened between a p-type nitride semiconductor layer and a p-side electrode. Therefore, the present invention can solve the conventional problem.
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Jeon Soo Kun
Kim Chang Tae
Park Eun Hyun
Yoo Tae-Kyung
Epivalley Co., Ltd.
Husch Blackwell Sanders LLP
Jackson Jerome
Kim Jay C
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