III-nitride semiconductor light emitting device

Details III-nitride semiconductor light emitting device III-nitride semiconductor light emitting device

2007-08-07

2007-08-07

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257SE33013

Reexamination Certificate

active

10544328

ABSTRACT:
The present invention relates to an III-nitride semiconductor light emitting device in which a single layer or plural layers made of SixCyNz(x≧0, y≧0, x+y>0, z>0) are inserted into or under an active layer and it is directed to a technology in which Al(x)Ga(y)In(1−x−y)N(0≦x≦1, 0≦y≦1, 0≦x+y≦1) of the hexagonal structure and SixCyNz(x≧0, y≧0, x+y>0, z>0) of the hexagonal structure are combined together in view of the properties of the SixCyNz(x≧0, y≧0, x+y>0, z>0) material.

REFERENCES:
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5247533 (1993-09-01), Okazaki
patent: 5290393 (1994-03-01), Nakamura
patent: 5306662 (1994-04-01), Nakamura
patent: 5563422 (1996-10-01), Nakamura
patent: 5652434 (1997-07-01), Nakamura
patent: 5733796 (1998-03-01), Manabe
patent: 6194743 (2001-02-01), Kondoh
patent: 6515306 (2003-02-01), Kuo
patent: 7014710 (2006-03-01), Fang et al.
patent: 2004/0101012 (2004-05-01), Nakamura et al.
patent: 10-043346 (2000-07-01), None
patent: 10-0448352 (2003-11-01), None
patent: WO 02/021121 (2002-03-01), None

Affiliated with

Also associated with

Rating

III-nitride semiconductor light emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with III-nitride semiconductor light emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III-nitride semiconductor light emitting device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3852765