III-nitride semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

Reexamination Certificate

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Details

C257S094000, C257S096000, C257S097000, C257SE33008, C257SE21121, C257SE21125, C257SE21127

Reexamination Certificate

active

07915636

ABSTRACT:
The present disclosure relates to a III-nitride semiconductor light emitting device which improves external quantum efficiency by using a p-type nitride semiconductor layer with a rough surface, the p-type nitride semiconductor layer including: a first nitride semiconductor layer with a first doping concentration, a second nitride semiconductor layer with a second doping concentration lower than the first doping concentration and with the rough surface, and a third nitride semiconductor layer with a higher doping concentration than a second doping concentration.

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patent: 2005/022655 (2005-03-01), None
patent: 2005/053042 (2005-06-01), None

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