III-nitride semiconductor light emitting device

Details III-nitride semiconductor light emitting device III-nitride semiconductor light emitting device

2011-03-29

2011-03-29

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S094000, C257S096000, C257S097000, C257SE33008, C257SE21121, C257SE21125, C257SE21127

Reexamination Certificate

active

07915636

ABSTRACT:
The present disclosure relates to a III-nitride semiconductor light emitting device which improves external quantum efficiency by using a p-type nitride semiconductor layer with a rough surface, the p-type nitride semiconductor layer including: a first nitride semiconductor layer with a first doping concentration, a second nitride semiconductor layer with a second doping concentration lower than the first doping concentration and with the rough surface, and a third nitride semiconductor layer with a higher doping concentration than a second doping concentration.

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