III-nitride semiconductor device

Details III-nitride semiconductor device III-nitride semiconductor device

2011-07-05

2011-07-05

Trinh, Michael (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S192000, C257SE29246

Reexamination Certificate

active

07973304

ABSTRACT:
A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.

REFERENCES:
patent: 5929467 (1999-07-01), Kawai et al.
patent: 6075262 (2000-06-01), Moriuchi et al.
patent: 2006/0006413 (2006-01-01), Beach
patent: 2006/0081985 (2006-04-01), Beach et al.
patent: 2007/0018199 (2007-01-01), Sheppard et al.
patent: 1 443 571 (2004-01-01), None

Affiliated with

Also associated with

Rating

III-nitride semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with III-nitride semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III-nitride semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2643860