III nitride semiconductor crystal and manufacturing method...

Details III nitride semiconductor crystal and manufacturing method... III nitride semiconductor crystal and manufacturing method...

2005-05-13

2010-06-08

Purvis, Sue (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257SE33033

Reexamination Certificate

active

07732236

ABSTRACT:
The invention provides Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.

REFERENCES:
patent: 6617261 (2003-09-01), Wong et al.
patent: 7097920 (2006-08-01), Usui et al.
patent: 2002/0102819 (2002-08-01), Tamura et al.
patent: 2003/0136957 (2003-07-01), Tsuda et al.
patent: H11-001399 (1999-01-01), None
patent: H11-074563 (1999-03-01), None
patent: 2001-257432 (2001-09-01), None
patent: 2001-342100 (2001-12-01), None
patent: 2002-261014 (2002-09-01), None
patent: 2002-316893 (2002-10-01), None
patent: 2003-165798 (2003-06-01), None
patent: 2003-277195 (2003-10-01), None

Affiliated with

Also associated with

Rating

III nitride semiconductor crystal and manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with III nitride semiconductor crystal and manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III nitride semiconductor crystal and manufacturing method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4241050