III-nitride power semiconductor device

Details III-nitride power semiconductor device III-nitride power semiconductor device

2011-03-01

2011-03-01

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With means to increase breakdown voltage

C257S129000, C257S493000, C257SE29222, C438S140000

Reexamination Certificate

active

07897998

ABSTRACT:
A power semiconductor device that includes common conduction regions, charge compensation regions, each adjacent a respective common conduction region, and a stand off region over the common conduction regions and charge compensation regions.

REFERENCES:
patent: 2002/0060330 (2002-05-01), Onishi et al.
patent: 2003/0224588 (2003-12-01), Yamauchi et al.
patent: 2005/0191821 (2005-09-01), Beach et al.
patent: 2006/0067137 (2006-03-01), Udrea et al.
patent: 2009/0057713 (2009-03-01), Hirler

Affiliated with

Also associated with

Rating

III-nitride power semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with III-nitride power semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III-nitride power semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2625073