III-nitride material structures including silicon substrates

Details III-nitride material structures including silicon substrates III-nitride material structures including silicon substrates

2007-07-24

2007-07-24

Chambliss, Alonzo (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S615000, C257SE33037, C257SE33049, C438S604000

Reexamination Certificate

active

11004628

ABSTRACT:
III-nitride material structures including silicon substrates, as well as methods associated with the same, are described. Parasitic losses in the structures may be significantly reduced which is reflected in performance improvements. Devices (such as RF devices) formed of structures of the invention may have higher output power, power gain and efficiency, amongst other advantages.

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