III-nitride light emitting device with reduced polarization...

Details III-nitride light emitting device with reduced polarization... III-nitride light emitting device with reduced polarization...

2006-10-03

2006-10-03

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S085000, C257S086000, C257S103000

Reexamination Certificate

active

07115908

ABSTRACT:
A semiconductor light emitting device includes a light emitting layer sandwiched between two spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than in the device with conventional spacer layers, such as GaN spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting layer is less than about 0.02 C/m2. In some embodiments, at least one of the spacer layers is a quaternary alloy of aluminum, indium, gallium, and nitrogen.

REFERENCES:
patent: 6515313 (2003-02-01), Ibbetson et al.
patent: 2002/0058349 (2002-05-01), Khan et al.
patent: 2005-217415 (2005-08-01), None
Jianping Zhang et al., “Enhanced luminescence in InGaN multiple quantum wells with quaternary AllnGaN barriers”, Applied Physics Letters, vol. 77, No. 17, Oct. 23, 2000, pp. 2668-2670.
M. E. Aumer et al., “Strain-induced piezoelectric field effects on light emission energy and intensity from AllnGaN/InGaN quantum wells”, Applied Physics Letters, vol. 79, No. 23, Dec. 3, 2001, pp. 3803-3805.
J. Zhang et al., “Pulsed atomic layer epitaxy of quaternary AllnGaN layers”, Applied Physics Letters, vol. 70, No. 7, Aug. 13, 2001, pp. 925-927.
Changqing Chen et al., Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AllnGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission, Jpn. J. Appl. Phys., vol. 41, (2002), Part 1, No. 4A, Apr. 2002, pp. 1924-1928.

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