Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-04-19
2011-04-19
Sayadian, Hrayr A (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S094000, C257S096000, C257S097000, C257S103000, C257SE33025, C257SE33026, C257SE33027, C257SE33028, C257SE33029, C257SE33030, C257SE33031, C257SE33032, C257SE33033, C257SE33034, C257SE21115, C257SE21117, C257SE21118, C257SE21119, C257SE21566, C257S013000
Reexamination Certificate
active
07928448
ABSTRACT:
A semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown over a porous III-nitride region. A III-nitride layer comprising InN is disposed between the light emitting layer and the porous III-nitride region. Since the III-nitride layer comprising InN is grown on the porous region, the III-nitride layer comprising InN may be at least partially relaxed, i.e. the III-nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire.
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Epler John E.
Wierer Jr. Jonathan J.
Philips Lumileds Lighting Company LLC
Sayadian Hrayr A
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