III-nitride device and method with variable epitaxial growth...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21380

Reexamination Certificate

active

11004189

ABSTRACT:
A semiconductor device composed of III-nitride materials is produced with epitaxial growth that permits vertical and lateral growth geometries to improve device characteristics. The resulting device has a greater breakdown voltage due to the greater integrity of the semiconductor material structure since no ion implantation processes are used. The epitaxially grown layers also exhibit greater thermal conductivity for improved operation with power semiconductor devices. The device may include a laterally grown charge compensated area to form a superjunction device. The resulting device may be bidirectional and have improved breakdown voltage in addition to higher current capacity for a given voltage rating.

REFERENCES:
patent: 6809351 (2004-10-01), Kuramoto et al.
patent: 6881651 (2005-04-01), Koide et al.
patent: 6986693 (2006-01-01), Chowdhury et al.
patent: 2002/0066403 (2002-06-01), Sunakawa et al.
patent: 2003/0162340 (2003-08-01), Tezen
patent: 2005/0269593 (2005-12-01), Chowdhury et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

III-nitride device and method with variable epitaxial growth... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with III-nitride device and method with variable epitaxial growth..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III-nitride device and method with variable epitaxial growth... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3884288

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.