Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2007-10-02
2007-10-02
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C257SE21380
Reexamination Certificate
active
11004189
ABSTRACT:
A semiconductor device composed of III-nitride materials is produced with epitaxial growth that permits vertical and lateral growth geometries to improve device characteristics. The resulting device has a greater breakdown voltage due to the greater integrity of the semiconductor material structure since no ion implantation processes are used. The epitaxially grown layers also exhibit greater thermal conductivity for improved operation with power semiconductor devices. The device may include a laterally grown charge compensated area to form a superjunction device. The resulting device may be bidirectional and have improved breakdown voltage in addition to higher current capacity for a given voltage rating.
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Beach Robert
Bridger Paul
Everhart Caridad
International Rectifier Corporation
Ostrolenk Faber Gerb & Soffen, LLP
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