Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-03-05
2009-06-16
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S015000, C257S079000, C257S098000, C257S099000, C257SE33068, C257SE33008, C257SE21108, C257SE21172
Reexamination Certificate
active
07547909
ABSTRACT:
The present invention relates to a IΠ-nitride compound semiconductor light emitting device comprising an active layer with the multi-quantum wells interposed between an n-InxAlyGazN(x+y+z=1, 0<x<1, 0<y<1, 0<z≦1) layer and a p-InxAlyGazN(x+y+z=1, 0<x<1, 0<y<1, 0<z<1) layer, wherein the active layer comprises an alternate stacking of a quantum-well layer made of InxGa1-xN(0.05<x<1) and a sandwich barrier layer, the sandwich barrier layer comprising a first outer barrier layer of InaGa1-aN(0<a<0.05), a middle barrier layer of AlyGa1-yN(0<y<1) formed on the first outer barrier layer and a second outer barrier layer of InbGa1-bN(0<b<0.05) formed on the middle barrier layer, thereby a high-efficiency/high-output light emitting device with high-current and high-temperature properties can be obtained, and it is possible to easily achieve a high-efficiency green light emission at a wavelength equal to or over 500 nm, and high-efficiency near UV light emission.
REFERENCES:
patent: 6455870 (2002-09-01), Wang et al.
patent: 7193246 (2007-03-01), Tanizawa et al.
patent: 2001/0009134 (2001-07-01), Kim et al.
patent: 2002/0179923 (2002-12-01), Morita et al.
patent: 2002/0197827 (2002-12-01), Taki et al.
patent: 2004/0051107 (2004-03-01), Nagahama et al.
patent: 2004/0195579 (2004-10-01), Sonobe
patent: 2005/0104080 (2005-05-01), Ichihara et al.
patent: 2005/0127391 (2005-06-01), Yanamoto
patent: 2005/0157765 (2005-07-01), Johnson
patent: 2006/0289860 (2006-12-01), Ichinose et al.
patent: 9-83016 (1997-03-01), None
patent: 09139543 (1997-05-01), None
patent: 9-266327 (1997-10-01), None
patent: 11-074622 (1999-03-01), None
patent: 2003150315 (2003-05-01), None
patent: 1020010077971 (2001-08-01), None
patent: 1020040047132 (2004-06-01), None
patent: WO-99/46822 (1999-09-01), None
patent: 2005034253 (2005-04-01), None
Darby & Darby P.C.
Epivalley Co., Ltd.
Green Telly D
Smith Zandra
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