III(A)-(VB) Type luminescent diode

Details III(A)-(VB) Type luminescent diode III(A)-(VB) Type luminescent diode

1975-07-10

1977-08-30

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 148187, 357 17, 357 18, H01L 3300, H01L 3319

Patent

active

040452573

ABSTRACT:
Due to its dopant structure, the radiant band of a III(A) - V(B) type luminescent diode, emitting light radiation in the plane of the PN-junction, possesses differences in delay time of .ltoreq. 10.sup.-10 seconds, which permit an extension to higher frequencies.
The dopant structure is characterized by an n.sup.+ type basic material incorporating an impurity concentration of N.sub.D .gtoreq. 10.sup.18 cm.sup.-3, and by a graded acceptor dopant profile which within the radiant region has a gradient of .ltoreq. 10.sup.22 cm.sup.-4 and a gradient of .gtoreq. 10.sup.23 cm.sup.-4 in the vicinity of the p.sup.+ region. Thus the injection conditions in respect to the quantum efficiencies and to the frequency range are improved. The diode is fabricated by a diffusion process and/or a liquid epitaxial process, in which definite temperatures and time relations have to be satisfied.

REFERENCES:
patent: 3560276 (1968-12-01), Panish et al.
patent: 3604991 (1971-09-01), Yonezu et al.
patent: 3617820 (1966-11-01), Herzog
patent: 3642544 (1972-02-01), Keyes et al.
patent: 3874952 (1975-04-01), Woodall

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