II-VI Semiconductor diode laser with lateral current confinement

Details II-VI Semiconductor diode laser with lateral current confinement II-VI Semiconductor diode laser with lateral current confinement

1994-11-17

1996-08-06

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

055441904

ABSTRACT:
A II-VI semiconductor diode laser has a II-VI semiconductor structure disposed atop a semiconductor substrate and covered with a contact layer. A current-blocking layer is disposed on top of this contact layer. The current-blocking layer has an etched groove extending therethrough, to expose a stripe of the contact layer. A metal electrode layer contacts the current-blocking layer and extends into the etched groove to contact the exposed stripe of the contact layer. The current-blocking layer confines the current flow between the metal electrode layer and the contact layer to the stripe of the contact layer exposed by the etched groove.

REFERENCES:
patent: 4454603 (1984-06-01), Marschall et al.
patent: 4856013 (1989-08-01), Iwano et al.
patent: 5036522 (1991-07-01), Tanguy et al.
patent: 5081632 (1992-01-01), Migita et al.
patent: 5213998 (1993-05-01), Qui et al.
patent: 5363395 (1994-11-01), Gaines et al.
patent: 5373521 (1994-12-01), Takahashi

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