II-VI semiconductor diode laser having a strained layer

Details II-VI semiconductor diode laser having a strained layer II-VI semiconductor diode laser having a strained layer

1994-12-20

1996-10-01

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 43, 372 45, H01S 319

Patent

active

055616801

ABSTRACT:
A II-VI semiconductor diode laser has a strained layer disposed on top of the structure. This strained layer, having a thickness of between about 0.05 microns and 2 microns, is either a single film or a stack of films, preferably of metal. The strain field produced by this layer in the semiconductor layer structure produces a change in the refractive index of the structure, due to the photo-elastic effect. By virtue of this effect a strain-induced waveguide is provided in the diode laser, with a strained layer in an edge, stripe or window structure. Furthermore, a tensely-strained layer covering the entire structure is used to produce a strain field similar to that which occurs when the structure is bent. This strain field will produce strain-enhanced gain in the underlying structure, which allows for operation of the laser at a lower threshold current.

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"A Novel Electro-Optically Controlled Directional-Coupler Switch in GaAs Epitaxial Layers at 1.15 .mu.m", IEEE Transactions on Electron Devices, vol. ED-19, Sep. 1982, pp. 1477-1483.
"Strain Induced Guided Wave Devices for III-V Semiconductor Opto-Electronic Circuits", IEE Colloquium on `Towards Semiconductor Integrated Opto-electronics` (Digest No. 29), London, England, 25 Mar. 1985 pp. 2/1-5 .

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