Coherent light generators – Particular active media – Semiconductor
Patent
1997-11-17
1999-10-26
Bovernick, Rodney
Coherent light generators
Particular active media
Semiconductor
372 50, H01S 319
Patent
active
059740701
ABSTRACT:
A II-VI semiconductor laser diode having a semiconductor body comprising a plurality of semiconductor layers forming a pn junction, a facet at one end of the body, and a reference electrode. The laser diode further includes a facet degradation reduction electrode located adjacent to the facet. The facet degradation reduction electrode is electrically isolated from a forward bias electrode. The facet degradation reduction electrode is used to establish an electric field sufficient to reduce facet degradation. In one embodiment, this electric field is established by applying a reverse-bias voltage between the facet electrode and the reference electrode. In another embodiment, this electric field is established by electrically connecting the facet electrode to the reference electrode.
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IEEE Photonics Technology Letters, "InGaAs-GaAs Quantum-Well Lasers with Monolithically Integrated Intracavity Electroabsorption Modulators by Selective-Area MOCVD", vol. 8, No. 1, R.M. Lammert et al., Jan. 1996, pp. 78-80.
Baude Paul Frederic
Haase Michael A.
3M Innovative Properties Company
Bovernick Rodney
Dennis II Charles L.
Leung Quyen Phan
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