Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
1998-08-03
2001-01-23
Font, Frank G. (Department: 2877)
Coherent light generators
Particular active media
Semiconductor
C257S078000, C257S103000
Reexamination Certificate
active
06178190
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a II-VI compound semiconductor light emitting device and, more particularly, to a visible light emitting diode and a laser diode.
In conventional group II-VI light emitting devices formed on an InP substrate, as disclosed in Japanese Patent Laid-Open Nos. 2-125477 and 5-21892, to efficiently emit light by injection of a current a double hetero structure is formed by using a ZnCdSeTe, MgZnCdSe, or MgZnSSe mixed crystal in a clad layer. Also, as disclosed in Japanese Patent Laid-Open No. 7-94832, a ZnCdSe mixed crystal is used to decrease the resistance of a p-type electrode.
Unfortunately, these conventional II-VI light emitting devices have a large device resistance and a low light emission efficiency. This is so because the band gap of a ZnCdSeTe mixed crystal is not so large as to strongly confine carriers. Also, p-type doping for ZnCdSe, MgZnCdSe, or MgZnSSe mixed crystals are difficult. Consequently, the hole concentration cannot be increased to 1×10
17
cm
−3
or more.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a light emitting device having a small device resistance and an increased light emission efficiency.
To achieve the above object of the present invention, there is provided a semiconductor light emitting device having a stacked structure comprising an n-type clad layer, an active layer, and a p-type clad layer on an InP substrate, wherein the p-type clad layer is made from an MgZnSeTe-based compound semiconductor lattice-matched with InP, and the n-type clad layer is made from a compound semiconductor lattice-matched with InP and selected from the group consisting of an MgZnSeTe-based compound semiconductor, an MgZnCdSe-based compound semiconductor, and an MgCdSSe-based compound semiconductor.
REFERENCES:
patent: 5773850 (1998-06-01), Naniwae
patent: 2-125477 (1990-05-01), None
patent: 5-21892 (1993-01-01), None
patent: 7-94832 (1995-04-01), None
H. Okuyama et al, Epitaxial growth of p-type ZnMgSSe, Appl. Phys. Lett. vol. 64, No. 7, Feb. 14, 1994, pp. 904-906.
Iwata Hiroshi
Naniwae Koichi
Font Frank G.
McGinn & Gibb, P.C.
NEC Corporation
Rodriquez Armando
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