II-VI compound semiconductor laser with burying layers

Details II-VI compound semiconductor laser with burying layers II-VI compound semiconductor laser with burying layers

1994-12-28

1996-05-21

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

055197221

ABSTRACT:
A II-VI compound semiconductor laser in which even if a II-VI compound semiconductor material having a large energy band gap is used for a burying layer, electrons can be confined effectively. The laser contains an n-side region in which the majority carrier is an electron, a first burying layer and a second burying layer. The first burying layer is formed to be contacted with the n-side region, and the second burying layer is formed on the first burying layer to cover the first burying layer. The first burying layer has a bottom of a conduction band that is equal to or higher than that of the n-side region, so that the first burying layer has a function of confining electrons in the n-side region. The first and second burying layers have first and second refractive indices, respectively. The first one is larger than the second one. The n-side region has a third refractive index. The first refractive index is larger than the second and third refractive indices, the second refractive index is smaller than the third refractive index, so that the second burying layer confines light in the n-side region.

REFERENCES:
patent: 5404027 (1995-04-01), Haase et al.
Applied Physics Letters, vol. 63, No. 17, pp. 2315-2317, Oct. 1993.

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