II-VI compound semiconductor epitaxial layers having low defects

Details II-VI compound semiconductor epitaxial layers having low defects II-VI compound semiconductor epitaxial layers having low defects

1996-06-10

1997-06-10

Wilczewski, Mary

Ships

Sail or control means therefor

Reefing and furling

117956, 117108, 438 47, H01L 21363, H01L 3300, H01L 3118, C30B 2308

Patent

active

056375301

ABSTRACT:
Epitaxial layers of II-VI semiconductor compounds having low incidence of lattice defects such as stacking faults are produced by first depositing a fraction of a monolayer of the cation species of the compound, followed by depositing a thin layer of the compound by migration enhanced epitaxy (MEE). Growth of the remainder of the layer by MBE results in much lower defects than if the entire layer had been grown by MBE. Layers are useful in devices such as LEDs and injection lasers.

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