II-IV group compound crystal article and process for producing s

Details II-IV group compound crystal article and process for producing s II-IV group compound crystal article and process for producing s

1991-03-04

1992-06-02

Kunemund, Robert

Metal treatment

Barrier layer stock material, p-n type

148DIG64, 148333, 437 83, 437 89, H01L 2120

Patent

active

051183650

ABSTRACT:
A II-VI group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (S.sub.NDS) and a nucleation surface (S.sub.NDL) which is arranged adjacent to said non-nucleation surface (S.sub.NDS), has a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and is comprised of an amorphous material, and a II-VI group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (S.sub.NDS) beyond said nucleation surface (S.sub.NDL).

REFERENCES:
patent: 3620833 (1971-11-01), Gleim
patent: 3764409 (1973-10-01), Nomura et al.
patent: 3885061 (1975-05-01), Corboy et al.
patent: 4066481 (1978-01-01), Manasevit et al.
patent: 4131496 (1978-12-01), Weitzel et al.
patent: 4174422 (1979-11-01), Mathews et al.
patent: 4239788 (1980-12-01), Beck
patent: 4279688 (1981-07-01), Abrahams et al.
patent: 4333792 (1982-06-01), Smith
patent: 4443488 (1984-03-01), Little et al.
patent: 4470192 (1984-09-01), Miller
patent: 4479847 (1984-10-01), McCaldin et al.
patent: 4530149 (1985-07-01), Jastrzebski et al.
patent: 4551394 (1985-11-01), Betsch et al.
patent: 4587717 (1986-05-01), Daniele et al.
patent: 4657603 (1987-04-01), Kruhler et al.
patent: 4670088 (1987-06-01), Tsaur et al.
patent: 4727047 (1988-02-01), Bozler et al.
patent: 4749441 (1988-06-01), Christenson et al.
Chen et al., "Embedded Epitaxial Growth . . . ", Appl. Phys. Lett., 38(5), Mar. 1981, pp. 301-303.
Jour. Electrochem. Soc., Vol. 130 (1983), pp. 1571-1580, Jul., No. 7, Jastrzebski, et al.
Filby et al., "Single Crystal Films of Silica on Insulators", British Journal of Applied Physics, Vol. 18, No. 10, Oct. 1967, pp. 1357-1383.
Journal of the Electrochemical Society, Vol. 130, No. 7 (1983), pp. 1571-1580.
Patent Abstracts of Japan, Vol. 10, No. 99 (E-396)[2156], Apr. 16, 1986, JPA 60-241,232.
Journal Abstracts of Japan, vol. 8, No. 172, (C-237)[1609], Aug. 19, 1984; JPA 59-69495.

Affiliated with

Also associated with

Rating

II-IV group compound crystal article and process for producing s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with II-IV group compound crystal article and process for producing s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and II-IV group compound crystal article and process for producing s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2226159