Internal-combustion engines – High tension ignition system – Current or voltage sensing in coil primary
Reexamination Certificate
1999-11-01
2001-09-11
Kwon, John (Department: 3747)
Internal-combustion engines
High tension ignition system
Current or voltage sensing in coil primary
C123S651000
Reexamination Certificate
active
06286491
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to an ignition apparatus and an ignition control system of an internal combustion engine and IGBT (an insulation gate type bipolar transistor) of an internal combustion engine and in particularly to relates to an ignition apparatus and an ignition control system of an internal combustion engine and IGBT of an internal combustion engine in which an anti-noise performance and an anti-serge performance are improved.
A technique in which IGBT (an insulation gate type bipolar transistor) is used in an ignition apparatus of an internal combustion engine and to this IGBT a protection function is provided is disclosed in Japanese application patent laid-open publication No. Hei 2-171904 and this technique relates to a technique in which IGBT is protected from a circuit of an outside of IGBT chip and many techniques similar to the above stated technique have published.
In the present invention, an ignition apparatus of an internal combustion engine is used under a severe and special environment such as a high voltage serge and noises and IGBT chip main body having a function for guarding this IGBT is constituted in a chip.
In particularly, the present invention is devised to correspond the special noises and serge as an ignitor being the ignition apparatus of the internal combustion engine. This technique is not shown in the conventional technique.
The main current of the ignitor in the recent year is one which is provided in an ignition coil as one body according to the requirements of an intensive performance of the functions and a small size and a light weight performance in an ignition system.
Further, as the performances, a large current performance in IGBT is requested according to the requirements of a high output performance, a high energy performance, a small size performance in the ignition coil. On the other hand a small consumption electric power performance including an ignitor drive circuit in ECU (an engine control unit) is requested and to correspond to this a switching element is now transferring from a bipolar power transistor to IGBT (the insulation gate type bipolar transistor).
Since the ignitor is installed in an interior portion as the ignition coil wherein the high voltage is generated and since the ignitor is necessary to endure in the environment which is exposed the unprecedented level noises and the precedent frequency level noises and the serge, there is a problem an improvement of an opposing forces to the above stated noises and the above stated serges of IGBT itself including a peripheral circuit.
SUMMARY OF THE INVENTION
An object of the present invention is to provide an ignition apparatus and an ignition control system of an internal combustion engine and IGBT (an insulation gate type bipolar transistor) of an internal combustion engine in which IGBT withstands strongly to the serges and noises and an ignition apparatus and an ignition control system of an internal combustion engine using this IGBT.
The above stated object of the present invention is attained by in an ignition apparatus of an internal combustion engine comprising a circuit for controlling a primary current of an ignition coil of the internal combustion engine according to a signal from an outside, a part of said circuit is formed according to an insulation gate type bipolar transistor (IGBT), and an interior gate electrode of said IGBT is constituted by a cell having two different shapes.
Further, the above stated object of the present invention is attained by an ignition control system comprising an ignition apparatus having a circuit for controlling a primary current of an ignition coil of an internal combustion engine in response to a signal from an outside and a part of said circuit is formed by IGBT (an insulation gate type bipolar transistor) and further a gate electrode of said IGBT has a cell having two different shapes, and a control of a fuel amount for supplying to the internal combustion engine and a control apparatus for controlling an ignition of the internal combustion engine.
Further, the above stated object of the present invention is attained by an insulation gate type bipolar transistor (IGBT) in which an internal portion gate electrode is constituted by a cell having two different shapes.
Further, the above stated object of the present invention is attained by an insulation gate type bipolar transistor (IGBT) comprising a condenser (C
1
) which is provided between said gate electrode and an emitter electrode, and a resistor (R
2
) connected to said gate voltage, and said resistor is provided to a side of said gate electrode from said condenser and is provided to a side of said gate electrode form said Zener diode condenser (ZD
2
).
According to the above stated solving means according to the present invention, (1) when the serge enters into the serge, according to an influence of the resistance which is parasitic on between the gate of the respective cells of IGBT which is constituted by plural cells (the minute IGBT), the scattering is caused in the balance of an operation start timing of the respective sells due to the transmission delay of the signal, the solving means is no occurrence of the cell destroy.
To this, in the stripe structure which is the wiring method of the chip used for the originally anxious latch-up countermeasure in IGBT, to reduce the parasitic resistance of the above stated gate, the wiring is formed to the mesh structure and by attaining the reduction of the parasitic resistance which is the feature of the mesh structure the whole chip is formed with the stripe structure, and IGBT is made strong against the latch-up.
Such a latch-up indicates the condition where when the runaway of IGBT according to the temperature rise of the element and when the collector current (Ic) is increased, etc., since the main current is not flown into through pnp transistor and npn transistor, this main current is not flown into MOSFET which constitutes a part of IGBT, the control of the collector current (Ic) according to G (gate) becomes incompetence.
(2) The filter for reducing the noises and the serge itself being superposed by the outside is constituted in the interior portion of IGBT. The condenser is formed between the gate and the emitter and the high pass filter against the high frequency serge is constituted, and further by putting the resistance together the parasitic condenser, and then the low pass filter is constituted.
As a result, the noise resistant performance and the serge resistant performance in IGBT of an ignition apparatus of the internal combustion engine can be improved.
REFERENCES:
patent: 5299543 (1994-04-01), Taruya et al.
patent: 5970964 (1999-10-01), Furuhata et al.
patent: 2-171904 (1990-07-01), None
Fukatsu Katsuaki
Ito Takashi
Kobayashi Ryoichi
Crowell & Moring LLP
Hitachi , Ltd.
Kwon John
LandOfFree
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