Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1973-06-12
1977-08-23
Larkins, William D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307304, 357 13, 357 23, 357 48, 357 49, 357 86, H01L 2978, H01L 2704, H01L 2712, H01L 2990
Patent
active
040443736
ABSTRACT:
Described are insulated gate-type field effect transistors used in capacitive memory circuits and having protective diodes for protecting the insulating films below the gate electrodes from electrical breakdown, in which parasitic transistor action which might be caused by minority carriers injected into semiconductor substrates by noise signals applied to the protective diodes are eliminated by means for suppressing injection of minority carriers or by means for preventing injected minority carriers from reaching the drain regions of the field effect transistors.
REFERENCES:
patent: 2974258 (1961-03-01), Garthwaite
patent: 3395290 (1968-07-01), Farina et al.
patent: 3407339 (1968-10-01), Booher
patent: 3448397 (1969-06-01), Lin et al.
patent: 3469155 (1969-09-01), Van Beck
patent: 3470390 (1969-09-01), Lin
patent: 3512058 (1970-05-01), Khajezadeh et al.
patent: 3573509 (1971-04-01), Crawford
Augusta et al., "Component Interconnection for Integrated Circuits," IBM Tech. Discl. Bull., vol. 8, No. 12, May 1966, pp. 1843-1844.
Kohisa Toshihiko
Matsumura Isao
Nomiya Kosei
Hitachi , Ltd.
Larkins William D.
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