IGFET threshold voltage compensator

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

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307297, H03K 102, H03K 3353

Patent

active

040499804

ABSTRACT:
A circuit is described which compensates for variation in the threshold voltage of Insulated Gate Field Effect Transistors (IGFETs) in an integrated circuit by modulating the substrate voltage in response to the variation of the threshold voltage from a desired nominal value.

REFERENCES:
patent: 3609414 (1971-09-01), Pleshko et al.
patent: 3806741 (1974-04-01), Smith
Chang, "FET N-Channel Threshold Voltage-Control Circuit;" IBM Tech. Discl. Bull.; vol. 17, No. 1, p. 140, June 1974.
Pleshko et al.; "MOS Transistor Electronic Stabilization of Thresholds;" IBM Tech. Discl. Bull.; vol. 10, No. 3, pp. 336-337; Aug. 1967.
Hummel, "Sentry Circuit for Substrate Voltage Control;" IBM Tech. Discl. Bull.; vol. 15, No. 2, pp. 478-479; July 1972.

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