IGFET structure with an extended gate electrode end

Details IGFET structure with an extended gate electrode end IGFET structure with an extended gate electrode end

1978-05-23

1980-09-23

Edlow, Martin H.

357 41, 357 68, H01L 2978

Patent

active

042246334

ABSTRACT:
Self-aligned IGFET structure having a source region, a drain region and a gate electrode placed between the source and drain regions to define a channel region. The gate electrode is provided with an extended end portion on a relatively thick field oxide layer and having a length no less than a predetermined channel length on one side of the channel region so that the breakdown voltage is not decreased on that one side of the channel region.

REFERENCES:
patent: 3694673 (1972-09-01), Au

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