IGFET Schmitt circuit

Details IGFET Schmitt circuit IGFET Schmitt circuit

1982-05-12

1984-07-10

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307279, 307448, H03K 3356, H03K 19094, H03K 1920

Patent

active

044594941

ABSTRACT:
A Schmitt circuit comprises a series connection of a first, second and third MOS transistors connected between a voltage source and the ground, and a fourth MOS transistor connected between the voltage source and the junction of the second and third MOS transistors. An input voltage is applied to the gates of the second and third MOS transistors. The voltage at the junction of the first and second MOS transistors is applied to the gate of the fourth MOS transistor and is also led out as an output. The Schmitt circuit further comprises a series connection of a sixth and seventh MOS transistors connected between the voltage source and the ground for dividing the source voltage, and a fifth MOS transistor connected between the junction of the sixth and seventh MOS transistors and the junction of the first and second MOS transistors and adapted to be rendered conductive when the potential at the said junction exceeds a predetermined voltage.

REFERENCES:
patent: 3882331 (1975-05-01), Sasaki
patent: 3975649 (1976-08-01), Kawagoe et al.
patent: 4023122 (1977-05-01), Oura
patent: 4097772 (1978-06-01), Carter
patent: 4376251 (1983-03-01), Kobayashi et al.
patent: 4379974 (1983-04-01), Plachno
patent: 4392066 (1983-07-01), Hirao

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