IGFET power semiconductor circuit with GAE control and fault det

Details IGFET power semiconductor circuit with GAE control and fault det IGFET power semiconductor circuit with GAE control and fault det

1994-06-22

1996-04-09

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Signal transmission integrity or spurious noise override

327427, H03K 1716

Patent

active

055065392

ABSTRACT:
A power semiconductor device circuit has an insulated gate field effect power semiconductor device with first and second main electrodes and a gate electrode. A gate control circuit provides a conductive path between the gate electrode and a gate voltage supply terminal. The gate control circuit has a resistance coupled between the gate electrode and the gate voltage supply terminal. A switching device has first and second main electrodes coupled to the gate voltage supply terminal and the gate electrode, respectively, so that the main current path between the first and second main electrodes is coupled in parallel with the resistance, the switching device having a first non-conducting state and a second conducting state for providing, in the second conducting state, an additional resistance in parallel with the resistance. The switching device switches from one of the first and second states to the other when the voltage at the gate voltage supply terminal changes in order to turn the power semiconductor device on or off, or upon the detection of a fault condition within the power semiconductor device. In either case, the overall resistance of the conductive path between the gate electrode and the gate voltage supply terminal is altered.

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