1974-09-12
1976-08-10
Wojciechowicz, Edward J.
357 4, 357 55, 357 49, H01L 2978, H01L 2712, H01L 4500, H01L 2906
Patent
active
039745155
ABSTRACT:
The breakdown voltage of a novel insulated gate field effect transistor (IGFET), comprising silicon on sapphire (SOS), is substantially doubled by a novel structure wherein a dielectric layer, formed over a channel region of the IGFET, also extends continuously over the surface of the sapphire on opposite sides of the channel region. A polysilicon gate electrode is disposed over the dielectric layer, the gate electrode extending beyond the channel region and being separated from the sapphire substrate by the dielectric layer. The novel method of making the IGFET comprises providing an island of epitaxially deposited doped silicon on the sapphire substrate, and dielectric layer extending continuously over both the island and over portions of the substrate on opposite sides of the island.
REFERENCES:
patent: 3191061 (1965-06-01), Weimer
patent: 3890632 (1975-06-01), Ham et al.
IBM Tech. Bul. -vol. 16, No. 3, Aug. 1973 - Abbas et al, "Silicon on Sapphire on Silicon..."
Ipri Alfred Charles
Sarace John Carl
Scott Joseph Hurlong
Christoffersen H.
Magee Thomas H.
RCA Corporation
Williams Robert P.
Wojciechowicz Edward J.
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