IGFET gating circuit having reduced electric field degradation

Details IGFET gating circuit having reduced electric field degradation IGFET gating circuit having reduced electric field degradation

1987-02-25

1987-11-03

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307200B, 307451, 307542, 307576, 307585, H03K 1706, H03K 17687, H03K 19003, H03K 19094

Patent

active

047045477

ABSTRACT:
As integrated field effect devices are scaled to smaller dimensions, the electric field in the channel increases for a constant operating voltage. This induces "hot electron" effects that reduce device reliability. The present invention reduces the voltage (and hence electric field) across one or more transistors in various complementary (e.g. CMOS) logic circuits. This is achieved while still obtaining a full logic swing (e.g., 0-5 volts) at the output of the logic. The technique also allows the retention of previous voltage levels (e.g., 5 volts) for operation of other portions of the integrated circuit (e.g., dynamic memory cells).

REFERENCES:
patent: 3818245 (1974-06-01), Suzuki et al.
patent: 3900746 (1975-08-01), Kraft et al.
patent: 4069430 (1978-01-01), Masuda
patent: 4185209 (1980-01-01), Street
patent: 4274014 (1981-06-01), Schade, Jr.
patent: 4295065 (1981-10-01), Hsieh et al.
patent: 4443715 (1984-04-01), Fox
patent: 4454571 (1984-06-01), Miyashita
patent: 4465945 (1984-08-01), Yin
patent: 4481432 (1984-11-01), Davies, Jr.
patent: 4490629 (1984-12-01), Barlow et al.
patent: 4499388 (1985-02-01), Adam
patent: 4518873 (1985-05-01), Suzuki et al.
patent: 4527254 (1985-07-01), Ryan et al.
patent: 4578600 (1986-03-01), Magee
patent: 4593214 (1986-06-01), Proebsting
patent: 4594519 (1986-06-01), Ohtani et al.
Dingwall, "Improved COS/MOS Inverter Circuit for Reducing Burnout and Latchup", RCA Technical Notes, 1230, pp. 1-4, Jul. 25, 1979.
"Structure-Enhanced MOSFET Degradation Due to Hot-Electron Injection", IEEE Electron Device Letters, vol. EDL-5, No. 3, H. R. Grinolds et al., Mar. 1984, pp. 71-74.
"Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor", IEEE Transactions on Electron Devices, vol. ED-27, No. 8, D. L. Critchlow et al., Aug. 1980, pp. 1359-1367.

Affiliated with

Also associated with

Rating

IGFET gating circuit having reduced electric field degradation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with IGFET gating circuit having reduced electric field degradation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and IGFET gating circuit having reduced electric field degradation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1675693