IGFET Forming method

Details IGFET Forming method IGFET Forming method

1980-03-05

1982-08-10

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29591, 148187, H01L 2128, H01L 2122

Patent

active

043430783

ABSTRACT:
An insulated-gate field effect transistor for high speed operation is disclosed in which the internal resistance of the gate electrode is reduced and the stray gate capacitance is maintained at a low value. In one embodiment, the reduction of the internal resistance of the gate electrode is effected by leading the gate electrode out of the transistor structure across, but above, the drain or source region in a bridge-like fashion. According to the method disclosed herein, the degree of integration of such IC devices is enhanced, and the lengths of the gate insulator film and the channel may be precisely defined.

REFERENCES:
patent: 3972756 (1976-08-01), Nagase et al.
patent: 4113533 (1978-09-01), Okamura et al.
patent: 4170492 (1979-10-01), Bartlett et al.
patent: 4179311 (1979-12-01), Athanas
patent: 4182023 (1980-01-01), Cohen et al.
patent: 4198250 (1980-04-01), Jecmen

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