IGFET Bootstrap circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307270, 307DIG4, 307DIG5, H03K 19094, H03K 19003, H03K 1920

Patent

active

042849055

ABSTRACT:
An improved IGFET bootstrap driver circuit capable of driving a load impedance to substantially full VDD power supply voltage and holding the load at that voltage for an indefinite period of time. The circuit includes a load transistor, a feedback capacitor connected between the source and gate electrodes of the load transistor, a fix valued resistor connected between the gate electrode of the load transistor and an on-chip bias voltage generating circuit for providing a bias voltage greater than VDD+VT. The resistor and the bias voltage generating circuit provide sufficient current to replenish the charge lost from the feedback capacitor through junction leakage currents in the driver circuit. The resistor is of a sufficiently high value such that the current drain from the generating circuit is insignificantly small in comparison to the current drain from the VDD power supply. The improved circuit also permits the load transistor to be switched "on" or "off" by an externally applied signal.

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patent: 3774055 (1973-11-01), Bapat
patent: 3805095 (1974-04-01), Lee et al.
patent: 3808468 (1974-04-01), Ludlow et al.
patent: 3906255 (1975-09-01), Mensch, Jr.
patent: 3986044 (1976-10-01), Madland et al.
patent: 4071783 (1978-01-01), Knepper
patent: 4110776 (1978-08-01), Rao et al.

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