IGFET and tuning circuit

Details IGFET and tuning circuit IGFET and tuning circuit

2006-01-31

2006-01-31

Kang, Donghee (Department: 2811)

Oscillators

Solid state active element oscillator

Transistors

C331S1170FE, C331S167000, C331S17700V, C327S263000

Reexamination Certificate

active

06992532

ABSTRACT:
A tuning circuit comprising a first reactance, a second reactance and a insulated gate field effect transistor having a gate arranged to receive a control signal. The first reactance is connected between the source of the field effect transistor and a first node. The second reactance has the same value as the first reactance and is connected between the drain of the field effect transistor and a second node. The first and second nodes are arranged so as to experience a balanced ac signal. Turning the field effect transistor on has the effect of making the first and second reactances effective in the circuit and vice versa.

REFERENCES:
patent: 4636825 (1987-01-01), Baynes
patent: 4737837 (1988-04-01), Lee
patent: 5635736 (1997-06-01), Funaki et al.
patent: 5693966 (1997-12-01), Anazawa et al.
patent: 6239665 (2001-05-01), Strom
patent: 2002/0070815 (2002-06-01), Traub
patent: 10052170 (2000-10-01), None
patent: 0724293 (1996-07-01), None
patent: 8116212 (1996-05-01), None

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