Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1996-04-24
1998-11-03
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257 77, 257153, H01L 2974, H01L 310312, H01L 31111
Patent
active
058312927
ABSTRACT:
A transistor of SiC having an insulated gate comprises a drain contact with a highly doped substrate layer formed on the drain. The substrate layer is of p-type or of n-type. For a p-type transistor, a highly doped n-type buffer layer may optionally be formed on top of the substrate layer. A low doped n-type drift layer, a highly doped p-type base layer, a highly doped n-type source region, and a source contact are then superimposed on the substrate layer. A vertical trench extends through the source region and the base layer to at least the drift layer. The trench has a wall next to these layers. A gate electrode extends vertically along the wall and at least over a vertical extension of the base layer. An insulating layer is arranged between the gate electrode and at least the base layer whereby an inversion channel is formed for electron transport from the source contact to the drain contact. An additional low doped p-type layer is arranged in the channel region laterally to the base layer, between the base layer and the insulating layer. The additional layer extends vertically over at least the base layer.
REFERENCES:
patent: 4851888 (1989-07-01), Ueno
patent: 5393999 (1995-02-01), Malhi
Harris Christopher
Janzen Erik
Konstantinov Andrei
ABB Research Ltd.
Fahmy Wael
LandOfFree
IGBT having a vertical channel does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with IGBT having a vertical channel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and IGBT having a vertical channel will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-692294