IGBT device with platinum lifetime control and reduced gaw

Details IGBT device with platinum lifetime control and reduced gaw IGBT device with platinum lifetime control and reduced gaw

1994-10-13

1996-06-18

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257144, 257148, 257154, 257156, 257168, 257170, 257339, 257340, 257401, 257409, 257590, 257639, 257641, 257775, H01L 2974, H01L 31111

Patent

active

055280587

ABSTRACT:
For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (.about.10.sup.14 /cm.sup.3) to block reverse bias voltage. The N+ layer is >20 .mu.m thick and doped below .about.10.sup.17 /cm.sup.3 but above the N- doping to enhance output impedance and reduce gain at high V.sub.ce conditions. Or the N+ layer is formed with a thin (.about.5 .mu.m) highly doped (>10.sup.17 /cm.sup.3) layer and a thick (>20 .mu.m) layer of .about.10.sup.16 /cm.sup.3 doping. A platinum dose of 10.sup.13 to 10.sup.16 /cm.sup.3 is ion implanted and diffused into the silicon to effect lifetime control. Gate and source contacts and body and source diffusions have an inter-digitated finger pattern with complementary tapers to minimize current crowding and wide gate buses to minimize signal delay. P+ doping beneath and marginally surrounding the gate pads and main gate bus negates breakdown conditions in widely spaced body regions and convex localities at the source finger end. Wide secondary gate buses parallel to the gate fingers have a P+ doped central stripe and transverse shorting bars spaced along their length. A non-polarizable PECVD passivation film of low phosphorus PSG and nitride or oxynitride or of oxynitride alone is made by controlling ionized gas residence time, silane partial pressure, and oxygen ratio during deposition, to minimize incorporation of Si--H into the film.

REFERENCES:
patent: 3356543 (1967-12-01), Desmond et al.
patent: 3953243 (1976-01-01), Goetzberger et al.
patent: 4365264 (1982-12-01), Mukai et al.
patent: 4497107 (1985-02-01), Cogan
patent: 4543707 (1985-10-01), Ito et al.
patent: 4675713 (1987-06-01), Terry et al.
patent: 4778774 (1988-10-01), Blossfeld
patent: 4837606 (1989-06-01), Goodman et al.
patent: 4907064 (1990-03-01), Yamazaki et al.
patent: 4980302 (1990-12-01), Shimizu
patent: 4980307 (1990-12-01), Ito et al.
patent: 5025293 (1991-06-01), Seki
patent: 5065222 (1991-11-01), Isii
patent: 5095343 (1992-03-01), Klodzinski et al.
patent: 5124772 (1992-06-01), Hideshima et al.
patent: 5170239 (1992-12-01), Hagino
Balga, Power Junction Gate Field Controlled Devices, IEDM, 1979, pp. 76-78.
Laska, A. 2000 V-Non-Punch-Through-IGBT with Dynamical Properties like a 1000 V-IGBTm, iEDM, 1990, pp. 32.61-32.64.
Tsunoda, Improved 600-and 1200-V IGBT with Low Turn-Off Loss and High Ruggedness, IEEE Power Electronics Specialist Conf., 1990, pp. 9-16.

Affiliated with

Also associated with

Rating

IGBT device with platinum lifetime control and reduced gaw does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with IGBT device with platinum lifetime control and reduced gaw, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and IGBT device with platinum lifetime control and reduced gaw will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-224766