Semiconductor device manufacturing: process – With measuring or testing
Patent
1997-01-27
1999-12-07
Niebling, John F.
Semiconductor device manufacturing: process
With measuring or testing
438 15, H01L 2166
Patent
active
059982276
ABSTRACT:
A combination of an IGBT and an antiparallel-connected freewheeling diode in which the IGBT die size is greater than about twice the diode die size. Preferably the diode die size is about 10%-25% of that of the IGBT. The respective die sizes of an IGBT and an antiparallel connected freewheeling diode may be adjusted by the steps of: determining respective initial die sizes for the IGBT and the diode; increasing the IGBT die size from the initial value; and reducing said diode die size from the initial value. The IGBT die size is increased sufficiently to reduce current density, conduction losses and switching losses in the IGBT. The diode die size is reduced sufficiently to reduce the reverse recovery charge of the diode so as to further reduce switching losses in the IGBT, to a minimum size which is sufficient to carry the antiparallel current without substantial overheating. The adjustment of the diode die size is advantageous either independently of, or in combination with, the adjustment of the IGBT die size. These adjustments are capable of reducing the switching energy of the IGBT and diode by about 30%-40% below that of a conventional IGBT-diode combination.
REFERENCES:
patent: 5274541 (1993-12-01), Kimura et al.
patent: 5459356 (1995-10-01), Schulze et al.
patent: 5801959 (1998-09-01), Ding et al.
patent: 5804873 (1998-09-01), Pelly
International Rectifier Corporation
Lebentritt Michael S.
Niebling John F.
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