Identifying causes of semiconductor production yield loss

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36446816, 36446817, 36446828, 324765, 438 14, G06F 1900

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059715863

ABSTRACT:
A method for identifying those process steps which produce "high risk" particulate contamination that is most likely to produce defects. The die positions of particulate deposits on a wafer are measured prior to and subsequent to a specific process step, to determine the die positions of particulate deposits introduced during that specific process step. Then, subsequent electrical tests of the wafer are used to determine which locations on the wafer contain faulty circuitry. The locations of particulate deposits introduced during the specific process step are then correlated to the locations of faulty circuitry. The result is a measure of the extent to which particulate deposits introduced during the specific process step contribute to reductions in yield of the manufacturing process.

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Isolating the ller Defect: Process analysis using Particle Map to Probe Map Correlation, Carman et al., pp. 198-203, 1993 IEEE/Semi Advanced Semiconductor Manufacturing Conference.

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