Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Reexamination Certificate
2005-02-01
2005-02-01
Kunemund, Robert M. (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step acting on the...
C117S003000, C117S017000, C117S932000
Reexamination Certificate
active
06849119
ABSTRACT:
A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, the wafer is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The wafer is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a wafer having a vacancy concentration profile in which the peak density is at or near the central plane with the concentration generally decreasing in the direction of the front surface of the wafer.
REFERENCES:
patent: 4314595 (1982-02-01), Yamamoto et al.
patent: 4376657 (1983-03-01), Nagasawa et al.
patent: 4437922 (1984-03-01), Bischoff et al.
patent: 4505759 (1985-03-01), O'Mara
patent: 4548654 (1985-10-01), Tobin
patent: 4851358 (1989-07-01), Huber
patent: 4868133 (1989-09-01), Huber
patent: 5327007 (1994-07-01), Imura et al.
patent: 5401669 (1995-03-01), Falster et al.
patent: 5403406 (1995-04-01), Falster et al.
patent: 5445975 (1995-08-01), Gardner et al.
patent: 5478408 (1995-12-01), Mitani et al.
patent: 5502010 (1996-03-01), Nadahara et al.
patent: 5502331 (1996-03-01), Inoue et al.
patent: 5534294 (1996-07-01), Kubota et al.
patent: 5539245 (1996-07-01), Imura et al.
patent: 5548654 (1996-08-01), Tobin
patent: 5593494 (1997-01-01), Falster
patent: 5611855 (1997-03-01), Wijaranakula
patent: 5674756 (1997-10-01), Satoh et al.
patent: 5738942 (1998-04-01), Kubota et al.
patent: 5788763 (1998-08-01), Hayashi et al.
patent: 5885905 (1999-03-01), Nadahara et al.
patent: 5919302 (1999-07-01), Falster et al.
patent: 5939770 (1999-08-01), Kageyama
patent: 5944889 (1999-08-01), Park et al.
patent: 5954873 (1999-09-01), Hourai et al.
patent: 5994761 (1999-11-01), Falster et al.
patent: 6180220 (2001-01-01), Falster et al.
patent: 6191010 (2001-02-01), Falster
patent: 6503594 (2003-01-01), Park
patent: 6579779 (2003-06-01), Falster
patent: 20020170631 (2002-11-01), Falster et al.
patent: 20030192469 (2003-10-01), Libbert et al.
patent: 20030221609 (2003-12-01), Falster
patent: 4323964 (1994-01-01), None
patent: 0 503 816 (1992-09-01), None
patent: 0536958 (1993-04-01), None
patent: 0716168 (1996-06-01), None
patent: WO 9838675 (1998-09-01), None
patent: 1-242500 (1989-09-01), None
patent: 2-32535 (1990-02-01), None
patent: 3-9078 (1991-02-01), None
patent: 3-185831 (1991-08-01), None
patent: 4-294540 (1992-10-01), None
patent: 5-155700 (1993-06-01), None
patent: 7-201874 (1995-08-01), None
patent: 7321120 (1995-12-01), None
patent: 7335657 (1995-12-01), None
patent: 8045944 (1996-02-01), None
patent: 8045945 (1996-02-01), None
patent: 8045947 (1996-02-01), None
patent: 9-199416 (1997-07-01), None
patent: 11-067781 (1999-03-01), None
patent: 11-150119 (1999-06-01), None
patent: WO 9838675 (1992-09-01), None
Abe, T. “Innovated Silicon Crystal Growth and Wafering Technologies” Electrochemical Society Proceedings, vol. 97, No. 3, pp. 123-133. (no month).
Abe et al. “Defect-Free Surfaces of Bulk Wafers by Combination of RTA and Crystal Growth Conditions” (publication information unknown) (no month
o year).
Chiou, H., “The Effects of Prefeatings on Axial Oxygen Precipitation Uniformity in Czochralski Silicon Crystals”, J. Electrochem. Soc., vol. 139, No. 6, Jun. 1992.
Falster, R., et al., “The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior”, Mat. Res. Soc. Symp. Proc. vol. 510, pp. 27-35, 1998 (no month).
Hara et al. “Enhancement of Oxygen Precipitation in Quenched Czochralski Silicon Crystals” Journal of Applied Phys. vol. 66 (1989) pp. 3958-3960 (Oct. 1989).
Hawkins, et al., “Effect of Rapid Thermal Processing on Oxygen Precipitation in Silicon,”Mat. Res. Soc. Symp. Proc., vol. 104, pp. 197-200, 1988.
Hawkins, et al., “The Effect of Rapid Thermal Annealing on the Precipitation of Oxygen in Silicon,”J. Appl. Phys., vol. 65, No. 9, pp. 3644-3654, 1989.
Jacob, M., et al. “Influence of RTP on Vacancy Concentrations”, Mat. Res. Soc. Symp. Proc. vol. 490, pp. 129-134, 1998. (no month).
Nadahara, et al., “Hydrogen Annealed Silicon Wafer,”Solid State Phenomena, vol. 57-58, pp. 19-26, 1997.
Pagani, M., et al., “Spatial variations on oxygen precipitation in silicon after high temperature rapid thermal annealing”, Appl. Physl. Lett., vol. 70, No. 12, pp. 1572-1574, 1997. (Mar. 1997).
Shimura, F. “Semiconductor Silicon Crystal Technology” Academic Press, Inc., San Diego, CA (1989) pp. 360-377. (no month).
Shimizu, H., et al., “Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits based on P-/P-Thin-Film Epitaxial Wafers,”Jpn. J. Appl. Phys., vol. 36, pp. 2565-2570 Part 1, No. 5A, 1997.
Winkler et al. “Improvement of the Gate Oxide Integrity by Modifying Crystal Pulling and its Impact on Device Failures” J. Electrochem. Soc., vol. 141, No. 5 (1994) pp. 1398-1401. (May 1994).
Zimmermann, et al., “Gold and Platinum Diffusion: The Key to the Understanding of Instrinsic Point Defect Behavior in Silicon,” Appl. Phys. A, vol. 55 (1992), pp. 121-134.
Zimmerman et al. “Vacancy Concentration Wafer Mapping in Silicon” J. Crystal Growth, vol. 129 (1993) pp. 582-592. (no month).
Cornara Marco
Falster Robert J.
Gambaro Daniela
Olmo Massimiliano
Kunemund Robert M.
MEMC Electronic Materials , Inc.
Powers Senniger
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