Patent
1980-12-29
1984-01-17
Larkins, William D.
357 40, 357 51, 357 59, H01L 2704
Patent
active
044266588
ABSTRACT:
A silicon integrated circuit having PN junction isolated components is designed omitting any straight metallic low-ohmic connection between a component-containing epitaxial pocket and the Vcc pad. All such ohmic connections include a dielectrically isolated polysilicon resistor to moderate reverse supply currents from these pockets to substrate. A special epitaxial pocket is ohmically connected through a fuse link to the Vcc pad to drain off any static charge that may accumulate at the Vcc pad during manufacture and assembly. After assembly, the fuse link blows when the supply is reversed, preventing all but a momentary burst of high current from the special pocket to the substrate.
REFERENCES:
patent: 3829709 (1974-08-01), Maigret et al.
patent: 3940785 (1976-02-01), Genesi
patent: 4133000 (1979-01-01), Greenstein
patent: 4260910 (1981-04-01), Colman
IBM Technical Disclosure Bulletin, vol. 19, No. 4, Sep. 1976, p. 1161.
Larkins William D.
Sprague Electric Company
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