IC which eliminates support bias influence on dielectrically iso

Details IC which eliminates support bias influence on dielectrically iso IC which eliminates support bias influence on dielectrically iso

1985-09-18

1989-02-21

James, Andrew J.

Fishing, trapping, and vermin destroying

357 47, 357 50, 357 59, 437 33, H01L 2712

Patent

active

048070122

ABSTRACT:
In integrated circuits having device islands separated laterally by support to polycrystalline regions and a dielectric layer, a shield layer is provided along the side walls at the dielectric layer having an impurity concentration sufficiently greater than the island's impurity concentration to eliminate support bias influence without seriously affecting the PN junction in the island. The shield impurity concentration is less than the region forming a PN junction with the island and preferably is below 1.times.10.sup.13 ions/cm.sup.2 and a peak impurity concentration less than 5.times.10.sup.16 ions/cm.sup.3.

REFERENCES:
patent: 3800195 (1974-03-01), Davidsohn
patent: 3865649 (1975-02-01), Beasom
patent: 3976511 (1976-08-01), Johnson
patent: 3979237 (1976-09-01), Morcom et al
patent: 4169000 (1979-09-01), Riseman
patent: 4242697 (1980-12-01), Berthold et al.
patent: 4290831 (1981-09-01), Ports et al.
patent: 4309715 (1982-01-01), MacPherson et al.
patent: 4608590 (1986-08-01), Hartman et al.
patent: 4624047 (1986-11-01), Tam

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